LPM3401 Datasheet, PDF (1/6 Pages) Lowpower Semiconductor inc – P-Channel Enhancement Mode Field Effect Transistor

Preliminary Datasheet
LPM3401
LPM3401 - -20V/4.2A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM3401 is the P-channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management
and other battery powered circuits where high-side
switching.
Ordering Information
LPM3401 □ □ □
F: Pb-Free
Package Type
B3: SOT23
Features
■ -20V/-4.2A,RDC(ON)≤54mΩ(typ.)@VGS=-2.5V
■ -20V/-3.0A,RDC(ON)≤60mΩ(typ.)@VGS=-4.5V
■ Super high density cell design for extremely
low RDC(ON)
■ SOT23 Package
Applications
— Portable Media Players
— Cellular and Smart mobile phone
— LCD
— DSC Sensor
— Wireless Card
Marking Information
Device
Marking
LPM3401B3F A1XXX
Package Shipping
SOT23-3 3K/REEL
XXX : The production cycle and the batch.
Pin Configurations
SOT23L(Top View)
LPM3401 – 00 Version 1.0 Datasheet Dec.-2011
www.lowpowersemi.com
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