LPM3400 Datasheet, PDF (1/7 Pages) Lowpower Semiconductor inc – These devices are particularly suitable for low voltage

Preliminary Datasheet
LPM3400
LPM3400 - 20V/4.2A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM3400 is N-channel logic enhancement mode
power field effect transistor, which are produced by
using high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suitable for low voltage
applications, notebook computer power management
and other battery powered circuits where high-side
switching are needed.
Ordering Information
LPM3400- □ □ □
Features
■ 20V/4.2A, RDC(ON)≤50mΩ(typ.)@VGS=4.5V
■ 20V/3.9A, RDC(ON)≤63mΩ(typ.)@VGS=2.5V
■ 20V/3.0A, RDC(ON)≤87mΩ(typ.)@VGS=1.8V
■ Super high density cell design for extremely low
RDC(ON)
■ SOT23 Package
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
F: Pb-Free
Package Type
B3: SOT23-3
Marking Information
Device
Marking
LPM3400B3F A2XXX
Package Shipping
SOT23-3 3K/REEL
XXX : The production cycle and the batch.
Pin Configurations
SOT23L(Top View)
LPM3400 – 01 May.-2013 Email: [e-mail] www.lowpowersemi.com
Page 1 of 7