AR770HT Datasheet, PDF (4/4 Pages) Power Semiconductors – RECTIFIER DIODE

AR770HT RECTIFIER DIODE
FINAL SPECIFICATION lug 02 - ISSUE : 02
FORWARD CHARACTERISTIC
Tj = 150 °C
14000
12000
10000
8000
6000
4000
2000
0
0.6
1.1
1.6
2.1
2.6
Forward Voltage [V]
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
SURGE CHARACTERISTIC
Tj = 150 °C
60
50
40
30
20
10
0
1
10
100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0.001 0.01
0.1
1
t[s]
10
100
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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