AR2009 Datasheet, PDF (4/4 Pages) Power Semiconductors – RECTIFIER DIODE

AR2009 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
FORWARD CHARACTERISTIC
Tj = 150 °C
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0.6
1.1
1.6
2.1
2.6
Forward Voltage [V]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001 0.01
0.1
1
t[s]
10
100
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
SURGE CHARACTERISTIC
Tj = 150 °C
20
18
16
14
12
10
8
6
4
2
0
1
10
100
n° cycles
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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