ARF2012 Datasheet, PDF (3/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ARF2012 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 97 - ISSUE : 04
SWITCHING CHARACTERISTICS
ANSALDO
FORWARD RECOVERY VOLTAGE
25
20
Tj = 150 °C
15
10
Tj = 25 °C
5
IF
VFR
VF
0
0
200 400 600 800 1000 1200
di/dt [A/µs]
1800
1600
1400
1200
1000
800
600
400
200
0
0
REVERSE RECOVERY CHARGE
Tj = 150 °C
1000 A
500 A
250 A
100
200
300
400
di/dt [A/µs]
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0
REVERSE RECOVERY CURRENT
Tj = 150 °C
1000 A
500 A
250 A
100
200
300
400
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
di/dt
IF
ta tb
Irr
Vr