ARF462 Datasheet, PDF (2/2 Pages) Power Semiconductors – FAST RECOVERY DIODE

ARF462 FAST RECOVERY DIODE
TARGET SPECIFICATION giu 00 - ISSUE : 02
FORWARD CHARACTERISTIC
Tj = 125 °C
1200
1000
800
600
400
200
0
2.6
3.1
3.6
4.1
4.6
5.1
Forward Voltage [V]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001 0.01
0.1
1
t[s]
10
100
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
SURGE CHARACTERISTIC
Tj = 125 °C
12
10
8
6
4
2
0
1
10
100
n° cycles
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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