AT202 Datasheet, PDF (1/4 Pages) Power Semiconductors – PHASE CONTROL THYRISTOR

ANSALDO
Ansaldo Trasporti s.p.a.
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PHASE CONTROL THYRISTOR
TARGET SPECIFICATION
Feb 97 - ISSUE : 03
AT202
Repetitive voltage up to
Mean on-state current
Surge current
800 V
635 A
6 kA
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
V DRM
Repetitive peak off-state voltage
I RRM
Repetitive peak reverse current
V=VRRM
I DRM
Repetitive peak off-state current
V=VDRM
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
I TSM
Surge on-state current
sine wave, 10 ms
I² t
I² t
without reverse voltage
VT
On-state voltage
On-state current = 800 A
V T(TO)
Threshold voltage
rT
On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current, min. From 75% VDRM up to 450 A, gate 10V 5ohm
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
td
Gate controlled delay time, typical
VD=100V, gate source 10V, 10 ohm , tr=.5 µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
Q rr
Reverse recovery charge
di/dt=-20 A/µs, I= 290 A
I rr
Peak reverse recovery current
VR= 50 V
IH
Holding current, typical
VD=5V, gate open circuit
IL
Latching current, typical
VD=5V, tp=30µs
GATE
V GT
Gate trigger voltage
VD=5V
I GT
Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
VD=VDRM
V FGM
Peak gate voltage (forward)
I FGM
Peak gate current
V RGM
Peak gate voltage (reverse)
P GM
Peak gate power dissipation
Pulse width 100 µs
PG
Average gate power dissipation
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
Tj
Operating junction temperature
F
Mounting force
Mass
ORDERING INFORMATION : AT202 S 08
standard specification
VDRM&VRRM/100
Tj
[°C] ^{Value Unit}
150 800
V
150 900
V
150 800
V
150 30
mA
150 30
mA
635
A
575
A
150
6
kA
180 x1E3 A²s
150 1.19
V
150 0.8
V
150 0.490
mohm
150 320
150 500
25 1.6
200
150
25 300
25 700
A/µs
V/µs
µs
µs
µC
A
mA
mA
25 3.5
V
25 200
mA
150 0.25
V
20
V
8
A
5
V
75
W
1
W
95
20
-30 / 150
4.9 / 5.9
55
°C/kW
°C/kW
°C
kN
g