ARF694 Datasheet, PDF (1/2 Pages) Power Semiconductors – FAST RECOVERY DIODE

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. [phone] - Fax [phone]
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FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
mar 03 - ISSUE : 2
ARF694
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V DC LINK
Permanent DC voltage
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
Mean forward current
I FSM
Surge forward current
I² t
I² t
V FM
Forward voltage
V F(TO)
Threshold voltage
rF
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 1570 A
SWITCHING
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
E OFF
Turn off energy dissipation
V FR
Peak forward recovery
I F = 1000 A
VR = 100 V
di/dt= 250 A/µs
I F = 1000 A
di/dt= 500 A/µs
VR =
V
di/dt= 500 A/µs
MOUNTING
R th(j-h)
Thermal impedance
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : ARF694 S 60
standard specification
VRRM/100
6000 V
645 A
10 kA
Tj
[°C]
Value
Unit
120 6000
V
120 6100
V
120
mA
120 3200
V
645
A
675
A
120
10
kA
500 x1E3 A²s
25
4.8
V
120 2.10
V
120 1.80
mohm
120
µC
120
A
µs
2000
µC
120 1150
A
J
125
V
21
°C/kW
3
°C/kW
-30 / 120
°C
22.0 / 24.5 kN
520
g