ARF681 Datasheet, PDF (1/2 Pages) Power Semiconductors – FAST RECOVERY DIODE

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
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FAST RECOVERY DIODE
FOR IGBT, IEGT, GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
mar 03 - ISSUE : 2
ARF681
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V DC LINK
Permanent DC voltage
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
Mean forward current
I FSM
Surge forward current
I² t
I² t
V FM
Forward voltage
V F(TO)
Threshold voltage
rF
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = =2000 A
SWITCHING
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
E OFF
Turn off energy dissipation
V FR
Peak forward recovery
I F = 1000 A
VR = 100 V
di/dt= 250 A/µs
I F = 2100 A
di/dt= 1000 A/µs
VR = 1800 V
di/dt= 400 A/µs
MOUNTING
R th(j-h)
Thermal impedance
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : ARF681 S 45
standard specification
VRRM/100
4500 V
1145 A
25 kA
Tj
[°C]
Value
Unit
125 4500
V
125 4600
V
125 150
mA
125 2800
V
1145
A
1185
A
125
25
kA
3125 x1E3 A²s
125
3.55
V
125
1.95
V
125
0.800 mohm
125
1500
µC
125
730
A
µs
2200
µC
125
1150
A
J
125
V
14.0
°C/kW
6.0
°C/kW
-30 / 125
°C
35.0 / 40.0 kN
850
g