ARF676 Datasheet, PDF (1/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ANSALDO
Ansaldo Trasporti s.p.a.
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FAST RECOVERY DIODE
FINAL SPECIFICATION
feb 97 - ISSUE : 03
ARF676
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current =1570 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V FR
Peak forward recovery
I F = 1000 A
di/dt= 250 A/µs
VR = 100 V
di/dt= 400 A/µs
MOUNTING
R th(j-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF676 S 48
standard specification
VRRM/100
4800 V
1515 A
18 kA
Tj
[°C] ^{Value Unit}
140 4800
V
140 4900
V
140 100
mA
1515
A
1535
A
140 18
kA
1620 x1E3 A²s
25 2.4
V
140
1.25
V
140
0.500 mohm
6
µs
140 2000
µC
800
A
0.5
140 40
V
18
°C/kW
-30 / 140 °C
22.0 / 24.5 kN
300
g