ARF673 Datasheet, PDF (1/2 Pages) Power Semiconductors – FAST RECOVERY DIODE

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. [phone] - Fax [phone]
Sales Office:
Tel. [phone] - Fax [phone]
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
mar 03 - ISSUE : 2
ARF673
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V DC LINK
Permanent DC voltage
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
Mean forward current
I FSM
Surge forward current
I² t
I² t
V FM
Forward voltage
V F(TO)
Threshold voltage
rF
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = =2500 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
E OFF
Turn off energy dissipation
V FR
Peak forward recovery
I F = 2100 A
di/dt= 1100 A/µs
VR = 1800 V
di/dt= 400 A/µs
MOUNTING
R th(j-h)
Thermal impedance
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : ARF673 S 45
standard specification
VRRM/100
4500 V
990 A
15 kA
Tj
[°C]
Value
Unit
125 4500
V
125 4600
V
125
80
mA
125 2500
V
990
A
1030
A
125
15
kA
1125 x1E3 A²s
125
3.82
V
125
1.70
V
125
0.850 mohm
µs
2300
µC
125 1300
A
1
6
J
125
38
V
18
°C/kW
6
°C/kW
-30 / 125
°C
22.0 / 24.5 kN
300
g