ARF670 Datasheet, PDF (1/2 Pages) Power Semiconductors – FAST RECOVERY DIODE

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
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FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
dic 02 - ISSUE : 01
ARF670
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V DC LINK
Permanent DC voltage
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
Mean forward current
I FSM
Surge forward current
I² t
I² t
V FM
Forward voltage
V F(TO)
Threshold voltage
rF
Forward slope resistance
SWITCHING
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
V pk
Peak reverse recovery voltage
s
Softness (s-factor), min
E OFF
Turn off energy dissipation
V FR
Peak forward recovery voltage
MOUNTING
R th(j-h)
Thermal impedance
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Conditions
V=VRRM
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 1570 A
I F = 1000 A
VR = 100 V
di/dt= 250 A/µs
I F = 1000 A
VR = 350 V
L=
1 µH
di/dt=
±10%
±10%
500 A/µs
di/dt= 500 A/µs
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : ARF670 S 45
standard specification
VRRM/100
4500 V
1315 A
15 kA
Tj
[°C]
Value
Unit
140 4500
V
140 4600
V
140 150
mA
140 2500
V
1315
A
1370
A
140
15
kA
1125 x1E3 A²s
25 2.70
V
140 1.50
V
140 0.60
mohm
140 1500
µC
650
A
2050
µC
140 1050
A
1400
V
0.5
0.8
J
25
35
V
18
6
-40 / 140
22.0 / 24.5
300
°C/kW
°C/kW
°C
kN
g