ARF664 Datasheet, PDF (1/2 Pages) Power Semiconductors – FAST RECOVERY DIODE

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. [phone] - Fax [phone]
Sales Office:
Tel. [phone] - Fax [phone]
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
gen 03 - ISSUE : 1
ARF664
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V DC LINK
Permanent DC voltage
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
Mean forward current
I FSM
Surge forward current
I² t
I² t
V FM
Forward voltage
V F(TO)
Threshold voltage
rF
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 1570 A
SWITCHING
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
E OFF
Turn off energy dissipation
V FR
Peak forward recovery
I F = 1000 A
VR = 100 V
di/dt= 250 A/µs
I F = 1100 A
di/dt= 500 A/µs
VR =
V
di/dt= 500 A/µs
MOUNTING
R th(j-h)
Thermal impedance
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : ARF664 S 33
standard specification
VRRM/100
3300 V
1000 A
18 kA
Tj
[°C]
Value
Unit
125 3300
V
125 3400
V
125
mA
125 1500
V
1000
A
1025
A
125
18
kA
1620 x1E3 A²s
25 3.55
V
125 1.80
V
125 0.70
mohm
125
µC
125
A
µs
2000
µC
125 1100
A
J
125
V
21
°C/kW
6
°C/kW
00 / 125
°C
22.0 / 24.5 kN
520
g