ARF340 Datasheet, PDF (1/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ANSALDO
Ansaldo Trasporti s.p.a.
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FAST RECOVERY DIODE
FINAL SPECIFICATION
lug 98 - ISSUE : 01
ARF340
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current =1200 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V FR
Peak forward recovery
IF=
di/dt=
VR =
350 A
80 A/µs
100 V
di/dt= 400 A/µs
MOUNTING
R th(j-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF340 S 26
standard specification
VRRM/100
2600 V
775 A
6.4 kA
Tj
[°C] ^{Value Unit}
150 2600
V
150 2700
V
150 50
mA
775
A
780
A
150 6,4
kA
205 x1E3 A²s
25
2,3
V
150
1,15
V
150
0,685 mohm
4
µs
150 260
µC
140
A
0,4
150 20
V
50
°C/kW
-30 / 150 °C
8.0 / 9.0
kN
85
g