ARF322 Datasheet, PDF (1/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ANSALDO
Ansaldo Trasporti s.p.a.
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FAST RECOVERY DIODE
FINAL SPECIFICATION
ott 97 - ISSUE : 04
ARF322
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current =1200 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V FR
Peak forward recovery
I F = 1000 A
di/dt= 60 A/µs
VR = 50 V
di/dt= 100 A/µs
MOUNTING
R th(j-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF322 S 16
standard specification
VRRM/100
1600 V
740 A
11 kA
Tj
[°C] ^{Value Unit}
125 1600
V
125 1700
V
125 50
mA
740
A
740
A
125 11
kA
605 x1E3 A²s
25 1.65
V
125
0.90
V
125
0.500 mohm
2.0
µs
125 60
µC
70
A
0.5
4
V
52
°C/kW
-30 / 125 °C
8.4 / 9.4
kN
280
g