ARF241 Datasheet, PDF (1/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ANSALDO
Ansaldo Trasporti s.p.a.
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FAST RECOVERY DIODE
FINAL SPECIFICATION
nov 97 - ISSUE : 01
ARF241
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current =300 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V FR
Peak forward recovery
IF =
di/dt =
VR =
200 A
80 A/µs
100 V
di/dt = 400 A/µs
MOUNTING
R th(j-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF241 S 25
standard specification
VRRM/100
2500 V
260 A
3 kA
Tj
[°C] ^{Value Unit}
150 2500
V
150 2600
V
150 50
mA
260
A
265
A
150
3
kA
45 x1E3 A²s
150 2.71
V
150 1.75
V
150 3.20
mohm
1.4
µs
150 50
µC
75
A
0.4
V
95
°C/kW
-30 / 150 °C
4.5 / 5.0
kN
55
g