ARF221 Datasheet, PDF (1/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ANSALDO
Ansaldo Trasporti s.p.a.
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FAST RECOVERY DIODE
FINAL SPECIFICATION
ott 97 - ISSUE : 02
ARF221
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 600 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V FR
Peak forward recovery
IF =
di/dt =
VR =
200 A
40 A/µs
50 V
MOUNTING
R th(j-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF221 S 14
standard specification
VRRM/100
1400 V
415 A
5 kA
Tj
[°C] ^{Value Unit}
125 1400
V
125 1500
V
125
50
mA
415
A
410
A
125 4.5
kA
101 x1E3 A²s
125 1.47
V
125 1.05
V
125 0.70
mohm
2.0
µs
125
50
µC
50
A
V
95
°C/kW
-30 / 125 °C
4.5 / 5.0
kN
55
g