SR401 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SR401
POUT VS PIN GRAPH
SR401 Pin vs Pout Freq=175Mhz;
Vds=28Vdc, Idq=1.2A
320
18
280
17
240
Pout
16
200
P1dB = 200W
160
15
120
80
40
0
0
Efficiency @200W = 52%
5
10
Pin in Watts
Gain
15
14
13
12
20
IV CURVE
S4A 1 DIE IV
vg=2v
Vg=6v
Vg=4v
Vg=8v
45
Vg=10v
vg=12v
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10 12 14 16 18 20
VDS IN VOLTS
Zin Zout
1000
100
10
0
100.00
10.00
1.00
0
CAPACITANCE VS VOLTAGE
S4 1 DIE CAPACITANCE
Ciss
Coss
Crss
5
10
15
20
25
30
VDS IN VOLTS
ID & GM VS VGS
S4A 1 DIE ID & GM Vs VG
Id
gM
2
4
Vg6s in Vo8lts ¹⁰
12
14
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/08/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com