SR341 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SR341
POUT VS PIN GRAPH
SR341 Pin vs Pout Freq=175Mhz; Idq=1A; Vds=50V
500
19
450
18
400
350
300
Efficiency = 55%
Pout
17
250
16
200
Gain
15
150
100
1dB compression = 300W
14
50
0
0
5
10
15
Pin in Watts
13
20
IV CURVE
1000
100
10
0
S3E 1 DIE IV
35
100.00
30
25
10.00
20
15
1.00
10
5
0
0
2
vg=2v
4
6
Vg=4v
8
10
12 14
V_VD_gS₌₆IN_v VOLTS _vg=8v
Zin Zout
16 18
0
20
vg=12v
0.10
0
CAPACITANCE VS VOLTAGE
S3E 1 DIE CAPACITANCE
Ciss
Coss
Crss
10
20
30
40
50
VDS IN VOLTS
ID & GM VS VGS
S3E 1 DIE ID & GM Vs VG
Id
gM
2 4 6 8 10 12 14 16 18
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/10/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com