SQ742_14 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – RF POWER VDMOS TRANSISTOR

SQ742
110
100
90
80
70
60
50
40
30
20
10
0
0
POUT VS PIN GRAPH
S Q 742 F=400MHZ, V D S =50V , Idq=.6A
Pout
Efficiency = 50%
Gain
1
2
3
4
5
6
7
8
9
P IN IN W A T T S
18
17
16
15
14
13
12
11
10
10
IV CURVE
S1E 2 DIE IV
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
vg=2v
Vg=4v
VgV=D6vSINVOLTSvg=8v
0
vg=12v
Zin Zout
CAPACITANCE VS VOLTAGE
S1E 2 DIE CAPACITANCE
1000
Ciss
100
10
Coss
1
Crss
0.1
0
5
10
15
20
25
30
35
40
45
50
VDS IN VOLTS
ID & GM VS VGS
S1E 2 DIE ID & GM Vs VG
10.00
Id
1.00
gM
0.10
0.01
0
2
4
6
8 10 12 14 16 18
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/17/2003
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com