SM706 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SM706
POUT VS PIN GRAPH
SM706 Pin vs Pout Freq=175MHz,
Vds=28Vdc, Idq=.8A
175
14
150
125
100
13
Pout
12
75
50
Efficiency@120W = 72%
25
11
Gain
10
0
9
0
2
4
6
8
10
12
14
16
18
20
Pin in Watts
IV CURVE
S1A 6 DIE IV
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
18
20
vg=2v
Vg=4v
V^Vg^D=^S6v^INVOLTS vg=8v
0
vg=12v
Zin Zout
1000
100
10
0
100.00
10.00
1.00
0
CAPACITANCE VS VOLTAGE
S1A 6 DICE CAPACITANCE
Ciss
Coss
Crss
5
10
V D S I N¹⁵V O L T S
20
25
30
ID & GM VS VGS
S1A 6 DIE ID & GM Vs VG
Id
gM
2
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
01/28/2002
POLYFET RF DEVICES
REVISION
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com