SM705 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SM705
POUT VS PIN GRAPH
200
160
120
80
40
0
0
SM705 Pin vs Pout Freq=150MHz,
VDS=28V, Idq=1A
18
17
16
Pout
15
14
P1dB=110W
13
Gain 12
11
Efficiency@165W = 70%
10
9
2
4
6
8
10 12 14 16 18 20
Pin in Watts
IV CURVE
S1A 5 DIE IV
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
18
20
vg=2v
Vg=4v
V^Vg=^D6^Sv^INVOLTS vg=8v
0
vg=12v
Zin Zout
1000
100
10
0
100.00
10.00
1.00
0
CAPACITANCE VS VOLTAGE
S1A 5 DICE CAPACITANCE
Ciss
Coss
Crss
5
10
15
20
25
30
VDS IN VOLTS
ID & GM VS VGS
S1A 5 DIE ID & GM Vs VG
Id
gM
2
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com