SH702 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SH702
POUT VS PIN GRAPH
SH702 F=500MHZ, VDS=28V, Idq=.8A
110
100
90
80
Efficiency = 55%
70
60
50
40
30
20
1dB compression 80 watts
10
0
0
2
4
6
8
10
PIN IN WATTS
Pout
Gain
12
14
13
12
11
10
9
8
16
IV CURVE
S1A 2 DIE IV
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
vg=2v
Vg=4v
V^Vg=^D6^Sv^INVOLTS vg=8v
0
vg=12v
Zin Zout
1000
100
10
1
0
100.00
10.00
1.00
0.10
0
CAPACITANCE VS VOLTAGE
S1A 2 DICE CAPACITANCE
Ciss
Coss
Crss
5
10
15
20
25
30
VDS IN VOLTS
ID & GM VS VGS
S1A 2 DIE ID & GM Vs VG
Id
gM
2
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com