SE701_14 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – RF POWER VDMOS TRANSISTOR

SE701
POUT VS PIN GRAPH
SE701 F=500MHZ, VDS=28V, Idq=.4A
60
14
55
50
13
45
Pout
40
35
12
30
25
Gain
11
20
15
Efficiency = 50%
10
10
5
0
9
0
1
2
3
4
5
6
7
PIN IN WAT TS
IV CURVE
8
7
6
5
4
3
2
1
0
0
2
vg=2v
S1A 1 DIE IV
4
6
Vg=4v
8
10
12
14
16
18
20
V_VD_gS₌₆I_vN VOLTS _vg=8v
0
vg=12v
Zin Zout
CAPACITANCE VS VOLTAGE
S1A 1 DIE CAPACITANCE
1000
Coss
100
Ciss
10
Crss
1
0
4
8
12
16
20
24
28
VDS IN VOLTS
ID & GM VS VGS
S1A 1 DIE ID & GM Vs VG
10.00
Id
1.00
gM
0.10
0
2 4 6 8 10 12 14 16 18
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com