SD703 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SD703
POUT VS PIN GRAPH
SD703 Pin vs Pout F=500 MHZ; IDQ=.6A; VDS=28V
140
120
11
100
Pout
80
10
60
Gain
Efficiency = 60%
40
9
20
0
0
1dB compression = 110W
8
5
10
15
20
Pin in Watts
IV CURVE
S1A 3 DIE IV
25
1000
100
10
1
0
100.00
20
10.00
15
10
5
0
0
2
4
6
8
10
12
14
16
18
20
vg=2v
Vg=4v
Vg^V=^D6v^SINVOLTS vg=8v
0
vg=12v
Zin Zout
1.00
0.10
0
CAPACITANCE VS VOLTAGE
S1A 3 DICE CAPACITANCE
Ciss
Coss
Crss
5
10
15
20
25
30
VDS IN VOLTS
ID & GM VS VGS
S1A 3 DIE ID & GM Vs VG
Id
gM
2
4
V6gs in Volt8s
10
12
14
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com