SA741_14 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – RF POWER VDMOS TRANSISTOR

SA741
POUT VS PIN GRAPH
48
44
40
36
32
28
24
20
16
12
8
4
0
0
S A 741 Pin vs Pout F req=175MH z , V D S =50V , Idq=.2A
Pout
Gain
Efficiency = 55%
0.5
1
1.5
2
2.5
PIN IN W A T T S
IV CURVE
20.00
19.00
18.00
17.00
16.00
15.00
14.00
13.00
12.00
11.00
3
S1E 1 DIE IV
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
vg=2v
Vg=4v
8
10
12
14
16
18
20
Vg=V6DvS IN VOLTSvg=8v
0
vg=12v
Zin Zout
CAPACITANCE VS VOLTAGE
S1E 1 DIE CAPACITANCE
100
Ciss
10
Coss
1
Crss
0.1
0
5
10
15
20
25
30
35
40
45
50
VDS IN VOLTS
ID & GM VS VGS
S1E 1 DIE ID & GM Vs VG
10.00
Id
1.00
gM
0.10
0.01
0
2 4 6 8 10 12 14 16 18
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/17/2003
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com