P281_14 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – RF POWER VDMOS TRANSISTOR

POUT VS PIN GRAPH
P281
CAPACITANCE VS VOLTAGE
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
P281 POUT vs PIN F=1000 MHZ; IDQ=0.2A; VDS=28V
GAIN
POUT
Efficiency = 45%
0.1
0.2
0.3
0.4
0.5
PIN IN WATTS
POUT
GAIN
12.00
11.50
11.00
10.50
10.00
9.50
9.00
8.50
8.00
0.6
IV CURVE
F2A 1 DIE CAPACITANCE VS VDS
100
10
Ciss
Coss
Crss
1
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
2
VGS = 2V
F2A 1 DIE IV CURVE
4
6
VGS = 4V
8
10
12
VDS IN VOLTS
VGS = 6V
VGS = 8V
14
16
VGS = 10V
18
20
VGS 12V
F2A 1 DIE GM & ID vs VGS
10
1
Id
0.1
Gm
0.01
0
2
4
6
8
10
12
14
16
18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com