LR301_14 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – RF POWER LDMOS TRANSISTOR

LR301
400
350
300
250
200
150
100
50
0
0
POUT VS PIN GRAPH
LR301 Freq=352MHz, Vds=28Vdc, Idq=0.8A
Pout
Gain
Efficiency@315W = 67%
5
10
15
20
Pin in W a tts
IV CURVE
15
14.5
14
13.5
13
12.5
12
11.5
11
25
45
40
35
30
25
20
15
10
5
0
0
2
vg=2v
L3B 1 DIE IV
4
6
Vg=4v
8
10
12
14
16
18
20
V^Vg^D=^S6v^{IN VOLTS} vg=8v
0
vg=12v
Zin Zout
CAPACITANCE VS VOLTAGE
L3B 1 DIE CAPACITANCE
1000
Coss
100
Ciss
10
Crss
1
0
4
8
12
16
20
24
28
VDS IN VOLTS
ID & GM VS VGS
100.00
L3B 1 DIE ID & GM Vs VG
Id
10.00
gM
1.00
0.10
0
2 4 6 8 10 12 14 16 18
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com