LQ821_14 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – RF POWER LDMOS TRANSISTOR

LQ821
POUT VS PIN GRAPH
LQ821 POUT VS PIN F=500MHZ, IDQ=0.4A, VDS=12.5V
100
25
22.00
20.00
20
Pout
18.00
15
Efficiency = 55%
16.00
10
Gain
14.00
10
12.00
5
10.00
0
0.5
1
1.5
2
2.5
1
PIN IN WATTS
POUT
GAIN
0
IV CURVE
L2C 1 DIE IV
9
8
7
6
5
4
3
2
1
0
0
2 _vg=2v 4 _Vg=4v 6
V_Vg_D=_S6v_IN⁸_VOLTS vg=8v10
vg=1102v
vg=1142v
16
Zin Zout
CAPACITANCE VS VOLTAGE
L2C 1DIE CAPACITANCE
Ciss
Coss
Crss
2
4
6VDS IN VO8 LTS 10
12
14
ID & GM VS VGS
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com