LC821 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LC821
POUT VS PIN GRAPH
LC821 F=500MHz, Vds=12.5Vdc, Idq=.4A
10
9
8
7
6
5
4
3
2
1
0
0
14
Efficiency = 60%
13
Pout
12
Gain
11
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Pin in Watts
9
1
IV CURVE
L2C 1 DIE IV
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
Zin Zout
CAPACITANCE VS VOLTAGE
L2C1DIE CAPACITANCE
100
Ciss
10
Crss
Coss
1
0
2
4
6
8
10
12
14
VDS IN VOLTS
ID & GM VS VGS
100
L2C 1 DIE ID, GM vs VG
ID
10
1
GM
0.1
0
2
4
V⁶gs in Volt⁸s
10
12
14
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 05/01/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com