LC801 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LC801
POUT VS PIN GRAPH
LC801 Pin vs Pout Freq=500MHz,
Vds=28Vdc, Idq=.2A
30
18
17
25
16
20
Pout 1 5
14
15
13
10
5
Efficiency = 55%
12
Gain _{1 1}
10
0
9
0
0.5
1
1.5
2
2.5
3
Pin in Watts
IV CURVE
L2A 1 DICE IV
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
Zin Zout
100
10
1
0.1
0
100
CAPACITANCE VS VOLTAGE
L2B 1 DIE CAPACITANCE
Ciss
Coss
Crss
5
10
15
20
25
30
VDS IN VOLTS
ID & GM VS VGS
L2B 1 DIE ID, GM vs VG
10
ID
1
GM
0.1
0
2
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 05/01/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com