F1280 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1280
POUT VS PIN GRAPH
F1280 POUT VS PIN F=175 MHZ; IDQ=2.4A;
VDS=12.5V
90
80
70
60
50
40
30
20
10
0
0
Efficiency = 65%
2
4
6
PIN IN WATTS
17.00
16.00
15.00
14.00
13.00
12.00
11.00
10.00
9.00
8.00
8
10
12
POUT
GAIN
IV CURVE
CAPACITANCE VS VOLTAGE
F1C 6DIE CAPACITANCE
1000
Coss
Ciss
100
Crss
10
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
60
50
40
30
20
10
0
0
F1C 6 DIE IV CURVE
2
4
6
Vg = 2V
Vg = 4V
8
10
12
14
16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18
20
Vg = 12V
F1C 6 DICE ID & GM VS VG
100
Id
10
1
Gm
0.1
0
2
4
6
8
10
12
14
16
18
20
Vgs in Volts
GM
ID
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com