F1260 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1260
POUT VS PIN GRAPH
F1260 POUT VS PIN F=175 MHZ; IDQ=1.6A;
VDS=12.5V
70
16.00
60
15.00
50
14.00
40
13.00
30
20
Efficiency = 65%
12.00
11.00
10
10.00
0
9.00
0
1
2
3
4
5
6
7
PIN IN WATTS
POUT
GAIN
IV CURVE
CAPACITANCE VS VOLTAGE
F1C 4 DIE CAPACITANCE
1000
Coss
Ciss
100
10
0
Crss
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
35
30
25
20
15
10
5
0
0
2
Vg = 2V
F1C 4 DIE IV CURVE
4
6
Vg = 4V
8
10
12
Vds in Volts
Vg = 6V
Vg = 8V
14
16
Vg = 10V
18
20
Vg = 12V
F1C 4 DIE GM & ID vs VGS
100
Id
10
Gm
1
0.1
0
2
4
6
8
10
12
14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com