F1170 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1170
POUT VS PIN GRAPH
F1170 POUT VS PIN F=175
MHZ; IDQ=1.6A; VDS=28.0V
300
20.00
19.00
250
18.00
200
17.00
16.00
150
15.00
100
Efficiency = 55%
50
14.00
13.00
12.00
0
11.00
0
2
4
6
8
10
12
14
16
18
PIN IN WATTS
POUT
GAIN
IV CURVE
F1J 4 DICE IV
35
30
25
20
15
10
5
0
0
2
4
6
8
10 12 14 16
18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
CAPACITANCE VS VOLTAGE
F1J 4 DICE CAPACITANCE
1000
Ciss
100
Coss
Crss
10
1
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
100.00
F1J 4 DICE ID & GM Vs VG
Id
10.00
gM
1.00
0.10
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com