F1120 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1120
POUT VS PIN GRAPH
F1120 POUT VS PIN F=175
MHZ; IDQ=2.0A; VDS=28.0V
250
18.00
17.00
200
16.00
150
100
Efficiency = 75%
50
15.00
14.00
13.00
12.00
11.00
0
10.00
0
2
4
6
8 10 12 14 16 18 20
PIN IN WATTS
POUT
GAIN
IV CURVE
F1J 5 DICE IV
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10 12 14 16
18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
CAPACITANCE VS VOLTAGE
F1J 5 DICE CAPACITANCE
1000
100
Crss
Ciss
Coss
10
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
100.00
F1J 5 DICE ID & GM Vs VG
10.00
1.00
Id
gM
0.10
0
2
4
6
8
10
12
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com