F1116 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1116
POUT VS PIN GRAPH
F1116 POUT VS PIN F=400
MHZ; IDQ=0.4A; VDS=28.0V
60
15.50
50
14.50
40
13.50
30
12.50
20
Efficiency = 50%
10
11.50
10.50
0
9.50
0
1
2
3
4
5
6
7
P IN IN WATT S
POUT
GAI N
IV CURVE
CAPACITANCE VS VOLTAGE
F1J 1 DIE CAPACITANCE
1000
100
10
Crs s
Cis s
Cos s
1
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
9
8
7
6
5
4
3
2
1
0
0
2
Vg = 2V
F1J 1 DIE IV CU RVE
4
6
Vg = 4V
8
10
12
14
16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18
20
Vg = 12V
F1J 1 DIE GM & ID vs VGS
10
Id
1
Gm
0.1
0.01
0
2
4
6
8
10
12
14
16
18
20
Vgs inVolts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:w w w .polyfet.com