F1108 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1108
POUT VS PIN GRAPH
F1108 POUT VS PIN F=400
MHZ; IDQ=0.8A; VDS=28.0V
90
15.50
80
70
60
50
40
30
20
Efficiency = 55%
10
0
14.50
13.50
12.50
11.50
10.50
9.50
0
1
2
3
4
5
6
PIN IN WATTS
POUT GAIN
IV CURVE
18
16
14
12
10
8
6
4
2
0
0
2
Vg = 2V
F1J 2 DIE IV CU RVE
4
6
Vg = 4V
8
10
12
Vds in Volts
Vg = 6V
Vg = 8V
14
16
Vg = 10V
18
20
Vg = 12V
CAPACITANCE VS VOLTAGE
F1J 2 DICE CAPACITANCE
1000
Coss
100
Ciss
10
Crss
1
0
5
10
15
20
25
30
VDS IN VOLTS
100.00
10.00
ID AND GM VS VGS
F1J2 DICE ID&GMVsVG
Id
gM
1.00
0.10
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:w w w .polyfet.com