F1107 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

POUT VS PIN GRAPH
F1107
CAPACITANCE VS VOLTAGE
F1107 POUT vs PIN IDQ=0.4A Freq=400 MHz Vds=28.0V
60
17
50
GAIN
40
30
20
POUT
10
16
15
Efficiency = 55%
14
13
12
11
0
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
PIN IN WATTS
POUT
GAIN
IV CURVE
F1J 1 DIE CAPACITANCE
1000
100
10
Crss
Ciss
Coss
1
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
9
8
7
6
5
4
3
2
1
0
0
2
Vg = 2V
F1J 1 DIE IV CURVE
4
6
Vg = 4V
8
10
12
14
16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18
20
Vg = 12V
F1J 1 DIE GM & ID vs VGS
10
Id
1
Gm
0.1
0.01
0
2
4
6
8
10
12
14
16
18
20
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com