F1081 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

180
160
140
120
100
80
60
40
0
F1081
POUT VS PIN GRAPH
F-1081 POUT vs PIN
F=175 MHZ; IDQ=1.6A; VDS=28V
17
16
GAIN
15
14
POUT
13
12
Efficiency = 66.67%
11
10
2
4
6
8
10
12
14
16
PIN IN WATTS
IV CURVE
1000
100
10
0
30
25
20
15
10
5
0
0
2
Vg = 2V
F1B 4DIE IV CURVE
4
6
Vg = 4V
8
10
12
Vds in Volts
Vg = 6V
Vg = 8V
14
16
Vg = 10V
18
20
Vg = 12V
100
10
1
0.1
0
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
Coss
Ciss
Crss
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
F1B 4 DIE GM & ID vs VGS
Id
Gm
2
4
6
8
10
12
14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com