F1021 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

POUT VS PIN GRAPH
F1021
CAPACITANCE VS VOLTAGE
160
140
120
100
80
60
40
20
0
0
F1021 POUT vs PIN FREQ=400 MHZ; IDQ=1.6A; VDS=28V
GAIN
POUT
Efficiency = 55%
2
4
6
8
10
12
14
16
18
PIN IN WATTS
POUT
GAIN
16
15
14
13
12
11
10
9
8
20
IV CURVE
F1B 4DIE CAPACITANCE
1000
Coss
Ciss
100
Crss
10
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
30
25
20
15
10
5
0
0
2
Vg = 2V
F1B 4DIE IV CURVE
4
6
Vg = 4V
8
10
12
Vds in Volts
Vg = 6V
Vg = 8V
14
16
Vg = 10V
18
20
Vg = 12V
F1B 4 DIE GM & ID vs VGS
100
Id
10
1
Gm
0.1
0
2
4
6
8
10
12
14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com