F1016 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1016
POUT VS PIN GRAPH
F1016 POUT VS PI N F=400 MHZ; IDQ=.4A; VDS=28.0V
50
45
40
35
30
25
20
15
10
0
Efficiency = 65%
1
2
3
4
P IN IN WATT S
5
POUT
19.00
18.00
17.00
16.00
15.00
14.00
13.00
12.00
11.00
10.00
9.00
6
GAI N
IV CURVE
CAPACITANCE VS VOLTAGE
F1B 1 DIE Capac itance vs Vds
100
Coss
Ciss
10
Crss
1
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
6
5
4
3
2
1
0
0
2
Vg = 2V
F1B 1D IE I V CURVE
4
6
Vg = 4V
8
10
12
14
16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18
20
Vg = 12V
F1B 1 D IE GM & I D vs VG
10
Id
1
Gm
0.1
0.01
0
2
4
6
8
10
12
14
Vgs inVolts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:w w w .polyfet.com