MGDQ01 Datasheet, PDF (1/2 Pages) Polyfet RF Devices – Power RF Amplifiers

polyfet rf devices
MGDQ01
Power RF Amplifiers
Power = 15.0 Watts
Bandwidth = 30 to 512 Mhz
Gain = 25.0 dB Vdd =28.0 Volts
50 ohms Input/Output Impedance
Description
The MGDQ01 is a 15 Watt, 2 stage high gain
amplifier covering a bandwidth of 30-512 Mhz
using SMA connectors for RF in and out. This
module is suitable for military applications in a
rugged environment. An ALC pin is provided to
control the output power of the module. The
MGDQ01 may be used as the driver stage for
the MBDQ01 module.
Absolute Maximum Ratings (T=25 ^oC)
Parameter
DC supply Voltage 1
DC supply Voltage 2
AGC Voltage
Input Power
Output Power
Operating Case Temp.
Storage Temperature
Symbol Value
Unit
VDD1
32.0
V
VDD2
V
VAGC
8.00
V
Pin
0.05
W
Pout
Tc
Tstg
20.0
W
-20 to +85 ^o_C
-30 to +100 ^o_C
Electrical Characteristics: ( T=25 ^oC Zs=Zl=50 ohms. Vdd= 28.0 Volts )
Parameter
Frequency Range
Outut Power
Power Gain
Total Efficiency
2nd Harmonics
Intermod - 2 tone
Load Mismatch Tolerance
Symbol
BW
Po
PG
h
dso
Ip3
VSWR
Min
30
15.0
25.0
15
10:1
Typical
-20.00
Max
512
Unit
Mhz
Watts
dB
%
dBc
dBm
Relative
Test Conditions
50 ohm load
Idq = 2.00 Amps
@ Pout = 15.0 Watts
@ Pout = 15.0 Watts
@ Pout = 15.0 W. Freq = 270 Mhz
Freq = 270 Mhz; AvePwr= W
All Phase Angles
POLYFET RF DEVICES
REVISION 01/17/2006
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] URL:www.polyfet.com