LR2541 Datasheet, PDF (1/2 Pages) Polyfet RF Devices – SILICON GATE ENHANCEMENT MODE

polyfet rf devices
LR2541
General Description
This device is part of Polyfet's latest
family of 28VDC LDMOS devices.
Being an unmatched device and
having low capacitances makes it
ideal for broad band applications
such as communications and
broadcast. It is also suitable for
various narrow band applications.
Employing back-to-back gate diodes
for enhanced ESD protection and
having a high drain breakdown
voltage makes this device highly
rugged. The suitable frequency range
of this device is 1-1100MHz
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
200.0 Watts Push - Pull
Package Style LR
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
ABSOLUTE MAXIMUM RATINGS ( T = 25 ^oC )
Total
Device
Dissipation
420 Watts
Junction to
Case Thermal
Resistance
o
0.40 C/W
Maximum
Junction
Temperature
200 ^oC
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
18.0 A
Drain to
Gate
Voltage
80 V
Drain to
Source
Voltage
80 V
Gate to
Source
Voltage
+ 11 V
- _9V
RF CHARACTERISTICS ( 200.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
TYP MAX UNITS TEST CONDITIONS
Gps
Common Source Power Gain

Drain Efficiency
16
60
dB Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
% ^{Idq =} 0.80 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
80
V
Ids = 5.00 mA, Vgs = 0V
2.0 mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 10V
Vgs
Gate Bias for Drain Current
2
5
V
Ids = 0.20 A, Vgs = Vds
gM
Forward Transconductance
7.5
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.30
Ohm
Vgs = 10 V, Ids = 15.00 A
Idsat
Saturation Current
21.00
Amp
Vgs = 10 V, Vds = 10V
Ciss
Common Source Input Capacitance
122.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
2.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
45.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 07/29/2015
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com