GX4442 Datasheet, PDF (1/2 Pages) Polyfet RF Devices – RF POWER GAN TRANSISTOR

polyfet rf devices
GX4442
General Description
Polyfet's GAN (on SiC) HEMT
power transistors contain no
internal matching; making them
suitable for both broadband and
narrow band applications.
The use of a thermally enhanced
package enables this device to
have superior heat dissipation
properties. The high drain break
down voltage permits this device
to operate over a wide voltage
range.
RF POWER GAN TRANSISTOR
160.0 Watts Single Ended
Package Style GX
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
Suitable for use across 1-2500Mhz
ABSOLUTE MAXIMUM RATINGS ( T = 25 ^oC )
Total
Device
Dissipation
200 Watts
Junction to
Case Thermal
Resistance
o
1.50 C/W
Maximum
Junction
Temperature
200 ^oC
Storage
Temperature
o
o
-65 C to 150 C
Drain to
Source
Voltage
180 V
Gate to
Source
Voltage
-10 V to + 2 V
RF CHARACTERISTICS ( 160.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
TYP MAX UNITS
TEST CONDITIONS
Gps
Common Source Power Gain

Drain Efficiency
12
55
dB Idq = 0.60 A, Vds = 48.0 V, F = 2,000 MHz
% ^{Idq =} 0.60 A, Vds = 48.0 V, F = 2,000 MHz
VSWR Load Mismatch Tolerance
10:1 Relative Idq = 0.60 A, Vds = 48.0 V, F = 2,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP MAX UNITS
TEST CONDITIONS
Bvdss Drain Breakdown Voltage
250
V
Ids = 20.00mA, Vgs = -8V
Idsat
Saturation Current
24.00
Amp
Vgs = +2V, Vds = 10V
Idss
Vgs
Ciss
Crss
Zero Bias Drain Current
Gate Bias for Drain Current
Common Source Input Capacitance
Common Source Feedback Capacitance
8.0 mA
-2.5
V
26.0
pF
1.60
pF
Vds = 48.0 V, Vgs = -8V
Vds = 48.0 V Ids = 0.60A
Vds = 48.0 Vgs =-8V, F = 1 MHz
Vds = 48.0 Vgs =-8V, F = 1 MHz
Coss Common Source Output Capacitance
14.0
pF
Vds = 48.0 Vgs =-8V, F = 1 MHz
POLYFET RF DEVICES
REVISION 11/15/2013
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com