G22001 Datasheet, PDF (1/2 Pages) Polyfet RF Devices – RF POWER GAN TRANSISTOR

polyfet rf devices
G22001
General Description
Polyfet's GAN (on SiC) HEMT
power transistors contain no
internal matching; making them
suitable for both broadband and
narrow band applications.
The use of a thermally enhanced
package enables this device to
have superior heat dissipation
properties. The high drain break
down voltage permits this device
to operate over a wide voltage
range.
RF POWER GAN TRANSISTOR
20.0 Watts Single Ended
Package Style G2
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
Suitable for use across 1-3000Mhz
ABSOLUTE MAXIMUM RATINGS ( T = 25 ^oC )
Total
Device
Dissipation
40 Watts
Junction to
Case Thermal
Resistance
o
4.20 C/W
Maximum
Junction
Temperature
200 ^oC
Storage
Temperature
o
o
-65 C to 150 C
Drain to
Source
Voltage
125 V
Gate to
Source
Voltage
-10 V to + 2 V
RF CHARACTERISTICS ( 20.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
TYP MAX UNITS
TEST CONDITIONS
Gps
Common Source Power Gain

Drain Efficiency
VSWR Load Mismatch Tolerance
11
dB Idq = 0.13 A, Vds = 28.0 V, F = 2,000 MHz
65
% ^{Idq =} 0.13 A, Vds = _28.0 V, F = _2,000 MHz
10:1 Relative Idq = 0.13 A, Vds =_28.0 V, F = _2,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP MAX UNITS
TEST CONDITIONS
Bvdss Drain Breakdown Voltage
125
V
Ids = 7.50 mA, Vgs = -8V
Idsat
Saturation Current
7.20
Amp
Vgs = +2V, Vds = 10V
Idss
Vgs
Ciss
Crss
Zero Bias Drain Current
Gate Bias for Drain Current
Common Source Input Capacitance
Common Source Feedback Capacitance
2.0
mA
-2.3
V
7.2
pF
0.56
pF
Vds = 28.0 V, Vgs = -8V
Vds = 28.0 V Ids = 0.13A
Vds = 28.0 Vgs =-8V, F = 1 MHz
Vds = 28.0 Vgs =-8V, F = 1 MHz
Coss Common Source Output Capacitance
4.0
pF
Vds = 28.0 Vgs =-8V, F = 1 MHz
POLYFET RF DEVICES
REVISION 08/03/2016
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com