TIC226 Datasheet, PDF (4/6 Pages) Power Innovations Ltd – SILICON TRIACS

TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
MAX RMS ON-STATE CURRENT
vs
CASE TEMPERATURE
TI01AB
10
9
8
7
6
5
4
3
2
1
0
0
25
50
75
100 125 150
T_C - Case Temperature - °C
Figure 7.
MAX AVERAGE POWER DISSIPATED
vs
RMS ON-STATE CURRENT
TI01AC
32
28 ^{TJ = 110 °C}
Conduction Angle = 360 °
Above 8 A rms
24 _{See ITSM Figure}
20
16
12
8
4
0
0 2 4 6 8 10 12 14 16
I_T(RMS) - RMS On-State Current - A
Figure 8.
PARAMETER MEASUREMENT INFORMATION
V_AC
L1
V_AC
C1
50 Hz
R1
DUT
I_MT2
V_MT2
R_G
I_G
I_MT2
See
Note A
V_MT2
I_G
I_TRM
V_DRM
10%
dv/dt
63%
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
Figure 9.
PMC2AA
PRODUCT INFORMATION
4