TIP29D Datasheet, PDF (3/6 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

TIP29D, TIP29E, TIP29F
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS631AD
V_CE = 4 V
T_C = 25°C
t_p = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS631AE
10
I_C = 100 mA
I_C = 300 mA
I_C = 1 A
100
1·0
10
0·1
1
0·001
0·01
0·1
I_C - Collector Current - A
Figure 1.
0·01
1·0
0·1
1·0
10
100
I_B - Base Current - mA
Figure 2.
1000
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AF
1·0
V_CE = 4 V
T_C = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3