TIP29 Datasheet, PDF (3/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W)

TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS631AD
V_CE = 4 V
T_C = 25°C
t_p = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS631AE
10
I_C = 100 mA
I_C = 300 mA
I_C = 1 A
100
1·0
10
0·1
1
0·001
0·01
0·1
I_C - Collector Current - A
Figure 1.
0·01
1·0
0·1
1·0
10
100
I_B - Base Current - mA
Figure 2.
1000
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AF
1·0
V_CE = 4 V
T_C = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3