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TIP120 Datasheet, PDF (3/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,60-100V,65W)
40000
10000
TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS120AA
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS120AB
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1000
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
1·0
IC - Collector Current - A
Figure 1.
1·0
0·5
0
5·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
1·0
5·0
IC - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS120AC
3·0
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3