BDW93 Datasheet, PDF (3/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,45-100V,80W)

BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
50000
10000
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS130AE
T_C = -40°C
T_C = 25°C
T_C = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AG
3·0
t_p = 300 µs, duty cycle < 2%
I_B = I_C / 100
2·5
2·0
1·5
1000
1·0
V_CE = 3 V
t_p = 300 µs, duty cycle < 2%
100
0·5
1·0
10
20
I_C - Collector Current - A
Figure 1.
0·5
0
0·5
T_C = -40°C
T_C = 25°C
T_C = 100°C
1·0
10
20
I_C - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AI
3·0
T_C = -40°C
T_C = 25°C
2·5 ^{TC = 100°C}
2·0
1·5
1·0
I_B
t_p
0·5
0·5
= I_C / 100
= 300 µs, duty cycle < 2%
1·0
10
20
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3